File {* Input FilesGrid      = "nmos_msh.tdr"Parameter = "nmos.par"* Output FilesCurrent = "nmos"Plot    = "nmos"Output  = "nmos"
}

Electrode {{ Name="source"        Voltage=0.0 }{ Name="drain"         Voltage=0.0 Resistor=100 }{ Name="gate"          Voltage=0.0 Barrier=-0.55 }{ Name="base"          Voltage=0.0 Current=0. }{ Name="HEMTgate"      Voltage=0.0 Schottky Barrier=0.78 }{ Name="floating_gate" Voltage=0.0 charge=0. }
}

Physics {[list of models]
}
or materialwise:Physics (Material="[material name]") {[list of models]
}
or regionwise:Physics (RegionInterface="[region name]") {[list of models]
}

Physics {Mobility( DopingDep HighFieldSat Enormal )EffectiveIntrinsicDensity( OldSlotboom )Recombination( SRH Auger Avalanche )
}

Plot {[list of variables]
}

Plot {eCurrent/v
}

Plot {eDensity hDensity eCurrent hCurrentPotential SpaceCharge ElectricFieldeMobility hMobility eVelocity hVelocityDoping DonorConcentration AcceptorConcentration
}

Math {
*-- Parallelization on multi-CPU machine --*Number_Of_Threads=1   * change the number of threads to > 1 to make * parallelization possible. First ensure your machine * has shared-memory multi-CPU configuration.
*-- Numeric/Solver Controls --*Extrapolate           * switches on solution extrapolation along a bias rampDerivatives           * considers mobility derivatives in JacobianIterations=8          * maximum-allowed number of Newton iterations (3D)RelErrControl         * switches on the relative error control for solution * variables (on by default)Digits=5              * relative error control value. Iterations stop if * dx/x < 10^(-Digits)Method=ILS            * use the iterative linear solver with default parameter NotDamped=100         * number of Newton iterations over which the RHS-norm * is allowed to increaseTransient=BE          * switches on BE transient method
}

Solve {
*- Buildup of initial solution:Coupled(Iterations=100){ Poisson }Coupled{ Poisson Electron Hole }
*- Bias drain to target biasQuasistationary(InitialStep=0.01 MinStep=1e-5 MaxStep=0.2Goal{ Name="drain" Voltage= 0.05 }){ Coupled{ Poisson Electron Hole } }
*- Gate voltage sweepQuasistationary(InitialStep=1e-3 MinStep=1e-5 MaxStep=0.05 Increment=1.41 Decrement=2.Goal{ Name="gate" Voltage= 1.5 }){ Coupled{ Poisson Electron Hole } }
}

Coupled(Iterations=100){ Poisson }
Coupled{ Poisson Electron Hole }

Quasistationary(InitialStep=0.01 MinStep=1e-5 MaxStep=0.2Goal{ Name="drain" Voltage= 0.05 }
){ Coupled{ Poisson Electron Hole } }

step(i) = min (step(i-1) * Increment, MaxStep)

Quasistationary(InitialStep=1e-3 MinStep=1e-5 MaxStep=0.05 Increment=1.41 Decrement=2.Goal{ Name="gate" Voltage= 1.5 }
){ Coupled{ Poisson Electron Hole } }

set ("drain" mode current)
#or:
set ("floating_gate" mode charge)
#and reverse:
set ("drain" mode voltage)

sdevice --parameter-names

Quasistationary (Goal {MaterialInterface = "AlGaAs/InGaAs"Model = "SurfaceRecombination"Parameter = "S0_e"Value = 1e5}
) { Coupled { poisson electron hole } }

Quasistationary (Goal { Model="DeviceTemperature" Parameter="Temperature" Value=400.}
) { Coupled { poisson electron hole } }

sdevice -P

-S                    print SiC model parameters
-P                    print Si model and default parameters
-P:Material           print Material model parameters
-P:Material:x         print Material model parameters at mole fraction x
-P:Material:x:y       print Material model parameters at mole fraction x and y
-P:All                print model parameters for all materials
-P:Material/Material  print model parameters for the material interface
-P filename           print model parameters for materials and interfaces usedin filename
-L                    print library of parameters (suboptions are the same as for -P)
-r                    when used with the -P and -L options, read the materiallibrary to generate the output
-M filename           print model parameters for regions with computed moledependencies

Scharfetter * relation and trap level for SRH recombination:
{ * tau = taumin + ( taumax - taumin ) / ( 1 + ( N/Nref )^gamma)* tau(T) = tau * ( (T/300)^Talpha )          (TempDep)* tau(T) = tau * exp( Tcoeff * ((T/300)-1) ) (ExpTempDep)taumin   = 0.0000e+00 , 0.0000e+00     # [s]taumax   = 1.0000e-05 , 3.0000e-06     # [s]Nref     = 1.0000e+16 , 1.0000e+16     # [cm^(-3)]gamma    = 1 , 1                       # [1]Talpha   = -1.5000e+00 , -1.5000e+00   # [1]Tcoeff   = 2.55 , 2.55                 # [1]Etrap    = 0.0000e+00                  # [eV]}

File {...Parameter = "newSRHparameters.par"...
}