#gedit include/configs/my2440.h //修改命令行前的名字和Nor Flash参数部分的定义

#define CONFIG_SYS_PROMPT   "[MY2440]#"  //将命令行前的名字改成[MY2440]

/*-----------------------------------------------------------------------
* FLASH and environment organization
*/
#if 0//注释掉下面两个类型的Nor Flash设置，因为不是我们所使用的型号
#define CONFIG_AMD_LV400     1 /* uncomment this if you have a LV400 flash */
#define CONFIG_AMD_LV800     1 /* uncomment this if you have a LV800 flash */
#endif

#ifdef CONFIG_AMD_LV800
#definePHYS_FLASH_SIZE            0x00100000  /* 1MB */
#defineCONFIG_SYS_MAX_FLASH_SECT  (19)/* max number of sectors on one chip */
#define CONFIG_ENV_ADDR            (CONFIG_SYS_FLASH_BASE + 0x0F0000)/* addr of environment */
#endif
#ifdef CONFIG_AMD_LV400
#define PHYS_FLASH_SIZE            0x00080000  /* 512KB */
#define CONFIG_SYS_MAX_FLASH_SECT  (11)/* max number of sectors on one chip */
#define CONFIG_ENV_ADDR            (CONFIG_SYS_FLASH_BASE + 0x070000)/* addr of environment */
#endif
#defineCONFIG_SST_39VF1601        1//添加mini2440开发板Nor Flash设置
#definePHYS_FLASH_SIZE            0x200000//我们开发板的Nor Flash是2M
#defineCONFIG_SYS_MAX_FLASH_SECT  (512)//根据SST39VF1601的芯片手册描述，对其进行操作有两种方式：块方式和扇区方式。现采用扇区方式(sector)，1 sector = 2Kword = 4Kbyte，所以2M的Nor Flash共有512个sector
#defineCONFIG_ENV_ADDR            (CONFIG_SYS_FLASH_BASE + 0x040000)//暂设置环境变量的首地址为0x040000(即：256Kb)

#gedit board/samsung/my2440/flash.c

//修改定义部分如下：

//#define MAIN_SECT_SIZE   0x10000
#define MAIN_SECT_SIZE     0x1000//定义为4k，刚好是一个扇区的大小

//#define MEM_FLASH_ADDR1  (*(volatile u16 *)(CONFIG_SYS_FLASH_BASE + (0x00000555 << 1)))
//#define MEM_FLASH_ADDR2  (*(volatile u16 *)(CONFIG_SYS_FLASH_BASE + (0x000002AA << 1)))
#define MEM_FLASH_ADDR1    (*(volatile u16 *)(CONFIG_SYS_FLASH_BASE +(0x00005555 << 1))) //这两个参数看SST39VF1601手册
#define MEM_FLASH_ADDR2    (*(volatileu16 *)(CONFIG_SYS_FLASH_BASE +(0x00002AAA << 1)))

//修改flash_init函数如下：
#elif defined(CONFIG_AMD_LV800)
(AMD_MANUFACT & FLASH_VENDMASK)|
(AMD_ID_LV800B & FLASH_TYPEMASK);
#elifdefined(CONFIG_SST_39VF1601)//在CONFIG_AMD_LV800后面添加CONFIG_SST_39VF1601
(SST_MANUFACT & FLASH_VENDMASK)|
(SST_ID_xF1601 & FLASH_TYPEMASK);for(j = 0; j < flash_info[i].sector_count; j++){
//if (j <= 3) {
//    /* 1st one is 16 KB */
//    if (j == 0) {
//        flash_info[i].start[j] = flashbase + 0;
//    }

flash_info[i].start[j]= flashbase + j * MAIN_SECT_SIZE;
}

//修改flash_print_info函数如下：

case(AMD_MANUFACT & FLASH_VENDMASK):
printf("AMD: ");
break;
case(SST_MANUFACT & FLASH_VENDMASK)://添加SST39VF1601的
printf("SST:");
break;
case(AMD_ID_LV800B & FLASH_TYPEMASK):
printf("1x Amd29LV800BB (8Mbit)\n");
break;
case(SST_ID_xF1601 & FLASH_TYPEMASK)://添加SST39VF1601的
printf("1x SST39VF1610 (16Mbit)\n");
break;

//修改flash_erase函数如下：//if ((info->flash_id & FLASH_VENDMASK) !=
// (AMD_MANUFACT & FLASH_VENDMASK)) {
//    return ERR_UNKNOWN_FLASH_VENDOR;
//}
if((info->flash_id & FLASH_VENDMASK)!=
(SST_MANUFACT & FLASH_VENDMASK)){
return ERR_UNKNOWN_FLASH_VENDOR;
}
///* wait until flash is ready */
//chip = 0;//do {
//    result = *addr;
//    /* check timeout */
//    if (get_timer_masked () >
//     CONFIG_SYS_FLASH_ERASE_TOUT) {
//        MEM_FLASH_ADDR1 = CMD_READ_ARRAY;
//        chip = TMO;
//        break;
//    }

if(*addr & 0x80)
{
       rc = ERR_OK;
break;
}
}

//修改write_hword函数如下：
MEM_FLASH_ADDR1 = CMD_UNLOCK1;
MEM_FLASH_ADDR2 = CMD_UNLOCK2;
//MEM_FLASH_ADDR1 = CMD_UNLOCK_BYPASS;
MEM_FLASH_ADDR1 = CMD_PROGRAM;
//*addr = CMD_PROGRAM;
*addr = data;

if((*addr & 0x80)==(data & 0x80))
{
       rc = ERR_OK;
break;
}}