代表性论文

一. 期刊论文

1. Wentong Zhang*, Rui Wang, Shikang Cheng, Yan Gu, Sen Zhang, Boyong He, Ming Qiao, Zhaoji Li, Bo Zhang, “Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability,” IEEE Electron Device Letters, 40 (12), 1969-1972.

2. Wentong Zhang*, Li Ye, Dong Fang, Ming Qiao, Kui Xiao, Boyong He, Zhaoji Li, and Bo Zhang, “Model and Experiments of Small-Size Vertical Devices With Field Plate,” IEEE Transactions on Electron Devices, 2019, 66(3): 1416-1421.

3. Wentong Zhang*, Li Ye, Dong Fang, Ming Qiao, Kui Xiao, Boyong He, Zhaoji Li, and Bo Zhang, “Model and Experiments of Small-Size Vertical Devices With Field Plate,” IEEE Transactions on Electron Devices, 2019, 66(3): 1416-1421.

4. Wentong Zhang*, Chunlan Lai, Ming Qiao, Zhaoji Li, and Bo Zhang, “The Minimum Specific on-Resistance of Semi-SJ Device,” IEEE Transactions on Electron Devices, 2019, 66(1): 598-604.

5. Wentong Zhang*, Zhenya Zhan, Yang Yu, Shikang Cheng, Yan Gu, Sen Zhang, Xiaorong Luo, Zehong Li, Ming Qiao, Zhaoji Li, and Bo Zhang. “Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI,” IEEE Electron Device Letters, 2017, 38(11): 1555-1558

6. Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. “Optimization and new structure of super junction with isolator layer,” IEEE Transactions on Electron Devices, 2017, 64(1): 217-223

7. Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li. The Ron,min of balanced symmetric vertical super junction based on R-well model, IEEE Transactions on Electron Devices, 2017, 64(1): 224-230

8. Wentong Zhang*, Bo Zhang, Ming Qiao, Zehong Li, Xiaorong Luo and Zhaoji Li, “Optimization of Lateral Super Junction based on the Minimum Specific On-resistance,” IEEE Trans. Electron Devices, vol. 63, no. 5, pp. 1984-1990, May. 2016.

9. Wentong Zhang*, Bo Zhang, Zehong Li, Ming Qiao and Zhaoji Li, “Theory of Super Junction with NFD and FD Modes based on Normalized Breakdown Voltage,” IEEE Trans. Electron Devices, vol. 62, no. 12, pp. 4114-4120, Dec. 2015.

10. Wentong Zhang*, Bo Zhang, Ming Qiao, Lijuan Wu, Kun Mao and Zhaoji Li, “A Novel Vertical Field Plate Lateral Device with Ultra-low Specific On-resistance,” IEEE Trans. Electron Devices, vol. 61, no. 2, pp. 518-524, Feb. 2014.

11. Bo Zhang*, Wentong Zhang, Zehong Li, Ming Qiao and Zhaoji Li, “Equivalent Substrate Model for Lateral Super Junction Device,” IEEE Trans. Electron Devices, vol. 61, no. 2, pp. 525-532, Feb. 2014.

12. Wentong Zhang*, Lijuan Wu, Ming Qiao, Xiaorong Luo, Bo Zhang and Zhaoji Li, “Novel high-voltage power lateral MOSFET with adaptive buried electrodes,” Chinese Physics B, vol. 21, no. 7, pp. 444-449, 2012.

二. 会议论文

1. Guangsheng Zhang, Wentong Zhang*, Junqing He, Xuhan Zhu, Sen Zhang, Jingchuan Zhao, Zhili Zhang, Ming Qiao, Xin Zhou, Zhaoji Li and Bo Zhang, “Experiments of a Novel low on-resistance LDMOS with 3-D Floating Vertical Field Plate” in Proc. 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) , pp. 507-510, May. 2019. (Oral).

2. Wentong Zhang, Song Pu, Chunlan Lai, Li Ye, Shikang Cheng, Sen Zhang, Boyong He, Zhuo Wang, Xiaorong Luo, Ming Qiao, Zhaoji Li and Bo Zhang, “Non-full Depletion Mode and its Experimental Realization of the Lateral Superjunction,” in Proc. 30st International Symposium on Power Semiconductor Devices and ICs (ISPSD) , pp. 475-478, May. 2018. (Oral).

3. Wentong Zhang*, Ming Qiao, Lijuan Wu, Ke Ye, Zhuo Wang, Zhigang Wang, Xiaorong Luo, Sen Zhang, Wei Su, Bo Zhang and Zhaoji Li, “Ultra-low Specific On-resistance SOI High Voltage Trench LDMOS with Dielectric Field Enhancement Based on ENBULF Concept,” in Proc. 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD) , pp. 329-332, May. 2013. (Oral).

三. 其他论文

1. Bo Zhang*, Wentong Zhang, Ming Qiao, Zhenya Zhan, and Zhaoji Li, “Concept and design of super junction devices,”. Journal of Semiconductors, 2018, 39(2): 021001-1-021001-12.

2. L.J. Wu, W.T. Zhang, M. Qiao, B. Zhang and Z.J. Li, “SOI SJ high voltage device with linear variable doping interface thin silicon layer,” Electronics Letters, vol. 48, no. 5, pp. 297-298, Mar. 2012.

3. Wu Lijuan, Zhang Wentong, Zhang Bo and Li Zhaoji, “A high voltage SOI PLDMOS with a Partical interface equipotential floating buried layer,” Journal of semiconductors, vol. 34, no. 7, pp: 074009(1-5), Jul. 2013.

4. Wu Lijuan, Zhang Wentong, Zhang Bo, Li Zhaoji, “A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers,” Chinese Physics Letters, Vol. 30, No. 12, 127102(1-4), 2013.

5. Wu Lijuan, Zhang Wentong, Zhang Bo and Li Zhaoji, “A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance,” Journal of semiconductors, vol. 35, no. 2, pp: 024004(1-5), Feb. 2014.

6. Kun Mao, Ming Qiao, WenTong Zhang, Bo Zhang and Zhaoji Li, “A 700 V narrow channel nJFET with low pinch-off voltage and suppressed drain-induced barrier lowering effect,” Superlattices and Microstructures, vol. 75, no. 2, pp: 576–585, Nov. 2014.

7. Qiao Ming, Zhuang Xiang, Wu Lijuan, Zhang Wentong, Wen Hengjuan, Zhang Bo, Li Zhaoji, “Breakdown voltage model and structure realization of the thin silicon layer linear variable doping SOI high voltage device with multiple step field plates,” Chinese Physics B, Vol. 21 No. 10, 108502(1-8), 2012.

授权专利：

1. 张波，章文通，陈钢，乔明，李肇基，一种具有超低比导通电阻特性的高压功率器件，2016.10.05，中国，ZL201410424546.X

2. 乔明，章文通，李燕妃，李肇基，张波，一种超低比导通电阻的横向高压器件，2016.08.31，中国，ZL201410424546.X

3. 乔明，章文通，薛腾飞，祁娇娇，张波，一种横向高压器件漂移区的制造方法，2016.04.06，中国，ZL201310526919.X

4. 乔明，章文通，黄军军，张波，一种横向高压超结功率半导体器件，2016.05.11，中国，ZL201310421765.8

5. 乔明，蔡林希，章文通，胡利志，张波，一种部分SOI超结高压功率半导体器件，2016.08.31，中国，ZL201310345306.6

6. 乔明，许琬，章文通，李燕妃，何逸涛，张昕，张波，一种横向恒流二极管，2016.01.20，中国，ZL201310275984.X

7. 乔明，蔡林希，章文通，李燕妃，张波，一种超结LDMOS器件，2015.04.15，中国，ZL201310077827.8

8. 乔明，李燕妃，章文通，吴文杰，许琬，蔡林希，陈涛，胡利志，黄健文，张波，一种横向高压功率半导体器件，2015.08.19，中国，ZL201210516539.3

9. 乔明，章文通，李燕妃，许琬，蔡林希，吴文杰，陈涛，胡利志，黄健文，张波，一种横向超结高压功率半导体器件，2015.08.19，中国，ZL201210516380.5

10. 乔明，章文通，许琬，李燕妃，张昕，吴文杰，张波，一种超低比导通电阻的SOI横向高压功率器件，2015.09.09，中国，ZL201210518182.2

11. 乔明，周锌，温恒娟，何逸涛，章文通，向凡，叶俊，张波，一种用于SOI高压集成电路的半导体器件，2013.07.17，中国，ZL201110318010.6

12. 乔明，银杉，赵远远，章文通，温恒娟，向凡，周锌，一种基于N型外延层的BCD集成器件及其制造方法，2012.11.07，中国，ZL201110105986.5

13. Ming Qiao, Yang Yu, Wentong Zhang, Zhengkang Wang, Zhenya Zhan, Bo Zhang, Lateral high-voltage device，2018.09.04，美国， US10068965B1

申请专利

1. 章文通，叶力，何俊卿，林祺，李珂，李洁，乔明，张波，具有低比导通电阻的分离栅VDMOS器件及制造方法，CN201810967667.7

2. 章文通，叶力，方冬，林祺，李珂，胡云鹤，乔明，张波，具有体内场板的分离栅VDMOS器件及其制造方法，CN201810968196.1

3. 章文通，叶力，方冬，李珂，林祺，乔明，张波，具有低比导通电阻的分离栅VDMOS器件及其制造方法，CN201810968880.X

4. 章文通，叶力，方冬，李珂，林祺，乔明，张波，具有体内场板的分离栅VDMOS器件及其制造方法，CN201810967996.1

5. 章文通，蒲松，叶力，赖春兰，乔明，李肇基，张波，基于超结的集成功率器件及其制造方法，CN201810394937.X

6. 章文通，蒲松，叶力，赖春兰，乔明，李肇基，张波，一种耗尽型超结MOSFET器件及其制造方法，CN201810393551.7

7. 章文通，蒲松，叶力，赖春兰，乔明，李肇基，张波，基于超结自隔离的耗尽型增强型集成功率器件及制造方法，CN201810395835.X

8. 章文通，詹珍雅，肖倩倩，王正康，乔明，一种具有超结结构的SOI横向高压器件，CN201710203410.X

9. 章文通，詹珍雅，肖倩倩，余洋，乔明，一种半薄硅层结构的横向高压器件，CN201710203993.6

10. 章文通，詹珍雅，肖倩倩，余洋，王正康，乔明，一种SOI横向高压器件，CN201710203874.0

11. 章文通 詹珍雅 李珂 余洋 梁龙飞 乔明 张波，一种消除高电场的器件，CN201710642100.8

12. 章文通，余洋，李珂，詹珍雅，梁龙飞，乔明，张波，一种高耐压横向超结器件，CN201710642237.3

13. 乔明，章文通，黄琬琰，余洋，张波，一种超结半导体器件终端结构，CN201610353060.0

14. 乔明，章文通，叶珂，祁娇娇，薛腾飞，张波，一种横向功率器件漂移区的制造方法，CN201310525073.8

15. 乔明，章文通，祁娇娇，薛腾飞，张波，一种半导体器件漂移区的制造方法，CN201310525043.7

16. 乔明，余洋，章文通，詹珍雅，王正康，梁龙飞，张波，一种横向高压器件，CN201710631105.0

17. 乔明，余洋，章文通，詹珍雅，王正康，梁龙飞，张波，一种横向高压器件，CN201710630197.0

18. 乔明，余洋，章文通，王正康，詹珍雅，张波，一种横向高压器件，CN201710495848.X

19. 乔明，余洋，章文通，王正康，詹珍雅，张波，一种横向高压器件，CN201710496712.0

20. 乔明，方冬，章文通，张波，晶圆及其制备方法，CN201611026608.7

21. 乔明，方冬，章文通，张波，晶圆及其制备方法，CN201611041964.6

22. 乔明，詹珍雅，章文通，肖倩倩，王正康，余洋，张波，一种SOI横向高压器件及其制造方法，CN201710202930.9

23. 乔明，詹珍雅，章文通，肖倩倩，曾莉尧，曹厚华，丁柏浪，张波，SOI低阻横向高压器件及其制造方法，CN201710202896.5

24. 乔明，詹珍雅，章文通，肖倩倩，何逸涛，王正康，余洋，张波，一种SOI横向绝缘栅双极晶体管，CN201710110260.8

25. 乔明，詹珍雅，章文通，肖倩倩，王正康，余洋，何逸涛，张波，可抑制Snapback现象的SOI？LIGBT器件及其制造方法，CN201710108735.X

26. 乔明，詹珍雅，章文通，何逸涛，肖倩倩，王正康，余洋，张波，一种SOI？LIGBT器件，CN201710108573.X

27. 乔明，詹珍雅，章文通，何逸涛，肖倩倩，余洋，王正康，张波，低阻且可抑制负阻效应的SOI？LIGBT器件及其制造方法，CN201710109457.X

28. 乔明，黄琬琰，章文通，余洋，张波，一种超结半导体器件终端结构，CN201610357355.5