sentaurus学习笔记（一）器件仿真

之前有跟大家说，以后转到sentaurus，因此silvaco会用的比较少，结果发现真的有一点贪心厌旧的感觉，现在基本上不用silvaco(lll￢ω￢)故这篇文章，将为大家带来的是关于sentaurus的结构仿真和器件的特性的提取。我们还是老规矩，先上结构图。

还是一个经典的IGBT结构，这是一个典型的N型IGBT，下面我将把一些相关的结构，和具体的写法用下面一幅图表达出来。

这里因为方便看，我们把器件的比例画的比较抽象。可以看到的是，这里有很多的距离参数是用一些变量名来写的，这也是sentaurus比silvaco方便的地方，有了变量名，随便改对变量的赋值，因此在以后修改器件的时候也会方便很多。下面为整个器件结构的代码。

(sde:clear)(sdegeo:set-default-boolean "ABA")(define Lg 13.5)
(define Lr 0.5)
(define Le 8)
(define Lj 3.5)
(define Lc 0.5)
(define Ls 12)
(define Lh 3)
(define Tg 0.05)
(define To 0.05)
(define Te 0.25)
(define Tw 0.5)
(define Td 140)
(define Tb 2)
(define Ti 3)
(define Tc 0.5);structure
;(sdegeo:create-rectangle
;   (position (+ Lj Lc) Tc 0) (position Lj 0 0)
;   "SiliconCarbide" "channel2")
;(sdegeo:create-rectangle
;   (position (* -1 (+ Lj Lc)) Tc 0) (position (* -1 Lj) 0 0)
;   "SiliconCarbide" "channel3")
;-drift
(sdegeo:create-rectangle(position (* (+ (+ Lg Lr) Le) -1.0) (+ Tg To) 0)   (position (+ (+ Lg Lr) Le) (+ (+ Tg To) Td) 0)"SiliconCarbide" "R.Drift" )
;-Channel
;(sdegeo:create-rectangle
;   (position Lj (+ Tc (+ To Tg)) 0) (position (* -1 Lj ) (+ To Tg) 0)
;   "SiliconCarbide" "Channel")
;-well
(sdegeo:create-rectangle (position (* (+ (+ Lg Lr) Le) -1.0) (+ Tg To) 0 )  (position (* -1.0 Lj) (+ (+ Tg To) Tw) 0 ) "SiliconCarbide" "R.WellLeft" )
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ Tg To) 0 )  (position Lj (+ (+ Tg To) Tw) 0 ) "SiliconCarbide" "R.WellRight" )
;-Source
(sdegeo:create-rectangle (position (* (+ (+ Lj Lc) Ls) -1) (+ Tg To) 0 )  (position (* (+ Lj Lc) -1.0) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.SourceLeft" )
(sdegeo:create-rectangle (position (+ (+ Lj Lc) Ls) (+ Tg To) 0 )  (position (+ Lj Lc) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.SourceRight" )
;-high concentration well
(sdegeo:create-rectangle (position (* (+ (+ Lg Lr) Le) -1) (+ Tg To) 0 )  (position (* (+ (+ Lj Lc) Ls) -1) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.HighConcentrationLeft" )
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ Tg To) 0 )  (position (+ (+ Lj Lc) Ls) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.HighConcentrationRight" )
;-Buffer Layer
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ (+ Tg To) Td) 0 )  (position (* (+ (+ Lg Lr) Le) -1) (+ (+ Tg To) (+ Td Tb) ) 0 ) "SiliconCarbide" "R.Buffer" )
;-Injector
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ (+ Tg To) (+ Td Tb)) 0 )  (position (* (+ (+ Lg Lr) Le) -1) (+ (+ (+ Tg To) (+ Td Tb)) Ti) 0 ) "SiliconCarbide" "R.Injector" )
;-Gate
;(sdegeo:create-rectangle
;   (position  (+ Lj Lc)  0 0) (position (+ (+ Lj Lc) Lr) (+ Tg To) 0 )
;   "SiO2" "R.SiO2Right" )
;(sdegeo:create-rectangle
;   (position (* -1.0 (+ Lj Lc) ) 0 0) (position (* (+ (+ Lj Lc) Lr) -1) (+ Tg To) 0 )
;   "SiO2" "R.SiO2Left" )
(sdegeo:create-rectangle(position (+ Lj Lc) Tg 0) (position (* (+ Lj Lc) -1.0) (+ Tg To) 0 )"SiO2" "R.SiO2Middle" )
;Contact
;-gate contact
(sdegeo:define-contact-set "gate"  4.0  (color:rgb 0.0 0.0 1.0 ) "##" )
(sdegeo:set-current-contact-set "gate")
(sdegeo:define-2d-contact (find-edge-id (position 0 Tg 0)) "gate" )
;-emitter contact
(sdegeo:define-contact-set "emitterleft"  4.0  (color:rgb 0.0 1.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "emitterleft")
(sdegeo:define-2d-contact (find-edge-id (position (* -0.5 (+ (+ Lg Lr) (+ Le (+ Lg Lr)))) (+ Tg To) 0)) "emitterleft" )
(sdegeo:define-contact-set "emitterright"  4.0  (color:rgb 0.0 1.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "emitterright")
(sdegeo:define-2d-contact (find-edge-id (position (* 0.5 (+ (+ Lg Lr) (+ Le (+ Lg Lr)))) (+ Tg To) 0)) "emitterright" )
;-collector contact
(sdegeo:define-contact-set "collector"  4.0  (color:rgb 0.0 0.0 1.0 ) "##" )
(sdegeo:set-current-contact-set "collector")
(sdegeo:define-2d-contact (find-edge-id (position 0 (+ (+ Tg To) (+ Ti (+ Td Tb))) 0)) "collector" );doping
;-Drift Doping
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(sdedr:define-constant-profile "DriftDop" "PhosphorusActiveConcentration" 2e14)
(sdedr:define-constant-profile-region "Place.DriftDop" "DriftDop" "R.Drift")
;-channel
;(sdedr:define-constant-profile "ChannelDop" "PhosphorusActiveConcentration" 2e14)
;(sdedr:define-constant-profile-region "Place.ChannelDop" "ChannelDop" "Channel")
;-Well Doping
(sdedr:define-constant-profile "WellRightDop" "BoronActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.WellRightDop" "WellRightDop" "R.WellRight")
(sdedr:define-constant-profile "WellLeftDop" "BoronActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.WellLeftDop" "WellLeftDop" "R.WellLeft")
;-Source Doping
(sdedr:define-constant-profile "SourceLeftDop" "PhosphorusActiveConcentration" 1e20)
(sdedr:define-constant-profile-region "Place.SourceLeftDop" "SourceLeftDop" "R.SourceLeft")
(sdedr:define-constant-profile "SourceRightDop" "PhosphorusActiveConcentration" 1e20)
(sdedr:define-constant-profile-region "Place.SourceRightDop" "SourceRightDop" "R.SourceRight")
;HighConcentration Doping
(sdedr:define-constant-profile "HighConcentrationRightDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.HighConcentrationRightDop" "HighConcentrationRightDop" "R.HighConcentrationRight")
(sdedr:define-constant-profile "HighConcentrationLeftDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.HighConcentrationLeftDop" "HighConcentrationLeftDop" "R.HighConcentrationLeft")
;Buffer Doping
(sdedr:define-constant-profile "BufferDop" "PhosphorusActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.BufferDop" "BufferDop" "R.Buffer")
;Injector Doping
(sdedr:define-constant-profile "InjectorDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.InjectorDop" "InjectorDop" "R.Injector")
;-Mesh
(sdedr:define-refinement-window "W.Global" "Cuboid"(position -200 -200 0)(position 200 200 0)
)
(sdedr:define-refinement-size "R.Global"3 3 0  0.01 0.01 0)
(sdedr:define-refinement-function "R.Global" "MaxLenInt" "SiliconCarbide" "SiliconCarbide"  0.01 1.5 "DoubleSide")
(sdedr:define-refinement-function "R.Global" "MaxLenInt" "SiliconCarbide" "SiO2"  0.01 1.2 "DoubleSide")
(sdedr:define-refinement-placement "P.Global" "R.Global" "W.Global")(sde:build-mesh "snmesh" "" "n@node@_msh")

sentaurus的代码书写比较有意思，结构仿真中代码的注释和器件特性提取中代码的注释所使用的符号完全不同，结构仿真中;为注释的符号。
我们来慢慢分析代码：

(sde:clear)(sdegeo:set-default-boolean "ABA")

(sde:clear)这一句什么意思我也不知道，大概是清楚什么东西的意思，每次写之前加上就行了。
(sdegeo:set-default-boolean “ABA”)这一句就比较关键了，这是确定下面结构书写顺序的一行，ABA的意思就是新的区域代替旧的区域，因为刚开始是使用silvaco，因此新的区域代替旧的区域个人来讲是比较习惯的，当然聪明的小伙伴已经知道了BAB是什么意思。

(define Lg 13.5)
(define Lr 0.5)
(define Le 8)
(define Lj 3.5)
(define Lc 0.5)
(define Ls 12)
(define Lh 3)
(define Tg 0.05)
(define To 0.05)
(define Te 0.25)
(define Tw 0.5)
(define Td 140)
(define Tb 2)
(define Ti 3)
(define Tc 0.5)

这就是之前所说的对变量的定义。

;structure
;(sdegeo:create-rectangle
;   (position (+ Lj Lc) Tc 0) (position Lj 0 0)
;   "SiliconCarbide" "channel2")
;(sdegeo:create-rectangle
;   (position (* -1 (+ Lj Lc)) Tc 0) (position (* -1 Lj) 0 0)
;   "SiliconCarbide" "channel3")
;-drift
(sdegeo:create-rectangle(position (* (+ (+ Lg Lr) Le) -1.0) (+ Tg To) 0)   (position (+ (+ Lg Lr) Le) (+ (+ Tg To) Td) 0)"SiliconCarbide" "R.Drift" )
;-Channel
;(sdegeo:create-rectangle
;   (position Lj (+ Tc (+ To Tg)) 0) (position (* -1 Lj ) (+ To Tg) 0)
;   "SiliconCarbide" "Channel")
;-well
(sdegeo:create-rectangle (position (* (+ (+ Lg Lr) Le) -1.0) (+ Tg To) 0 )  (position (* -1.0 Lj) (+ (+ Tg To) Tw) 0 ) "SiliconCarbide" "R.WellLeft" )
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ Tg To) 0 )  (position Lj (+ (+ Tg To) Tw) 0 ) "SiliconCarbide" "R.WellRight" )
;-Source
(sdegeo:create-rectangle (position (* (+ (+ Lj Lc) Ls) -1) (+ Tg To) 0 )  (position (* (+ Lj Lc) -1.0) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.SourceLeft" )
(sdegeo:create-rectangle (position (+ (+ Lj Lc) Ls) (+ Tg To) 0 )  (position (+ Lj Lc) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.SourceRight" )
;-high concentration well
(sdegeo:create-rectangle (position (* (+ (+ Lg Lr) Le) -1) (+ Tg To) 0 )  (position (* (+ (+ Lj Lc) Ls) -1) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.HighConcentrationLeft" )
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ Tg To) 0 )  (position (+ (+ Lj Lc) Ls) (+ (+ Tg To) Te) 0 ) "SiliconCarbide" "R.HighConcentrationRight" )
;-Buffer Layer
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ (+ Tg To) Td) 0 )  (position (* (+ (+ Lg Lr) Le) -1) (+ (+ Tg To) (+ Td Tb) ) 0 ) "SiliconCarbide" "R.Buffer" )
;-Injector
(sdegeo:create-rectangle (position (+ (+ Lg Lr) Le) (+ (+ Tg To) (+ Td Tb)) 0 )  (position (* (+ (+ Lg Lr) Le) -1) (+ (+ (+ Tg To) (+ Td Tb)) Ti) 0 ) "SiliconCarbide" "R.Injector" )
;-Gate
;(sdegeo:create-rectangle
;   (position  (+ Lj Lc)  0 0) (position (+ (+ Lj Lc) Lr) (+ Tg To) 0 )
;   "SiO2" "R.SiO2Right" )
;(sdegeo:create-rectangle
;   (position (* -1.0 (+ Lj Lc) ) 0 0) (position (* (+ (+ Lj Lc) Lr) -1) (+ Tg To) 0 )
;   "SiO2" "R.SiO2Left" )
(sdegeo:create-rectangle(position (+ Lj Lc) Tg 0) (position (* (+ Lj Lc) -1.0) (+ Tg To) 0 )"SiO2" "R.SiO2Middle" )

这里为对不同区域的定义，注意看我之前那张的X轴和Y轴的坐标的方向。这里的主要语句为(sdegeo:create-rectangle (position x y z) (position x y z) “material” “regionname”)
这里的两个点的取值的话，一定要是一个矩形的对角线。

;Contact
;-gate contact
(sdegeo:define-contact-set "gate"  4.0  (color:rgb 0.0 0.0 1.0 ) "##" )
(sdegeo:set-current-contact-set "gate")
(sdegeo:define-2d-contact (find-edge-id (position 0 Tg 0)) "gate" )
;-emitter contact
(sdegeo:define-contact-set "emitterleft"  4.0  (color:rgb 0.0 1.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "emitterleft")
(sdegeo:define-2d-contact (find-edge-id (position (* -0.5 (+ (+ Lg Lr) (+ Le (+ Lg Lr)))) (+ Tg To) 0)) "emitterleft" )
(sdegeo:define-contact-set "emitterright"  4.0  (color:rgb 0.0 1.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "emitterright")
(sdegeo:define-2d-contact (find-edge-id (position (* 0.5 (+ (+ Lg Lr) (+ Le (+ Lg Lr)))) (+ Tg To) 0)) "emitterright" )
;-collector contact
(sdegeo:define-contact-set "collector"  4.0  (color:rgb 0.0 0.0 1.0 ) "##" )
(sdegeo:set-current-contact-set "collector")
(sdegeo:define-2d-contact (find-edge-id (position 0 (+ (+ Tg To) (+ Ti (+ Td Tb))) 0)) "collector" )

contact的写法就比较有意思了，sentaurus将contact定义为了一条线，因此，只要找到线上的任意一个点就可以了。也就是找到这条线的ID。

;doping
;-Drift Doping
; - Common dopants:
; "PhosphorusActiveConcentration" | "ArsenicActiveConcentration"
; | "BoronActiveConcentration"
(sdedr:define-constant-profile "DriftDop" "PhosphorusActiveConcentration" 2e14)
(sdedr:define-constant-profile-region "Place.DriftDop" "DriftDop" "R.Drift")
;-channel
;(sdedr:define-constant-profile "ChannelDop" "PhosphorusActiveConcentration" 2e14)
;(sdedr:define-constant-profile-region "Place.ChannelDop" "ChannelDop" "Channel")
;-Well Doping
(sdedr:define-constant-profile "WellRightDop" "BoronActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.WellRightDop" "WellRightDop" "R.WellRight")
(sdedr:define-constant-profile "WellLeftDop" "BoronActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.WellLeftDop" "WellLeftDop" "R.WellLeft")
;-Source Doping
(sdedr:define-constant-profile "SourceLeftDop" "PhosphorusActiveConcentration" 1e20)
(sdedr:define-constant-profile-region "Place.SourceLeftDop" "SourceLeftDop" "R.SourceLeft")
(sdedr:define-constant-profile "SourceRightDop" "PhosphorusActiveConcentration" 1e20)
(sdedr:define-constant-profile-region "Place.SourceRightDop" "SourceRightDop" "R.SourceRight")
;HighConcentration Doping
(sdedr:define-constant-profile "HighConcentrationRightDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.HighConcentrationRightDop" "HighConcentrationRightDop" "R.HighConcentrationRight")
(sdedr:define-constant-profile "HighConcentrationLeftDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.HighConcentrationLeftDop" "HighConcentrationLeftDop" "R.HighConcentrationLeft")
;Buffer Doping
(sdedr:define-constant-profile "BufferDop" "PhosphorusActiveConcentration" 1e17)
(sdedr:define-constant-profile-region "Place.BufferDop" "BufferDop" "R.Buffer")
;Injector Doping
(sdedr:define-constant-profile "InjectorDop" "BoronActiveConcentration" 1e19)
(sdedr:define-constant-profile-region "Place.InjectorDop" "InjectorDop" "R.Injector")

这里是对区域的掺杂，这个没必要知道每条语句什么意思，直接换名字就可以了。

;-Mesh
(sdedr:define-refinement-window "W.Global" "Cuboid"(position -200 -200 0)(position 200 200 0)
)
(sdedr:define-refinement-size "R.Global"3 3 0  0.01 0.01 0)
(sdedr:define-refinement-function "R.Global" "MaxLenInt" "SiliconCarbide" "SiliconCarbide"  0.01 1.5 "DoubleSide")
(sdedr:define-refinement-function "R.Global" "MaxLenInt" "SiliconCarbide" "SiO2"  0.01 1.2 "DoubleSide")
(sdedr:define-refinement-placement "P.Global" "R.Global" "W.Global")(sde:build-mesh "snmesh" "" "n@node@_msh")

此处是对网格的定义，
(sdedr:define-refinement-window “W.Global” “Cuboid”
(position -200 -200 0)
(position 200 200 0)
这一句是限定一个三维的范围，在这个范围内，把器件装进去就可以了。
(sdedr:define-refinement-size "R.Global"3 3 0 0.01 0.01 0)
这句表示，X和Y方向的最大值为3，最小值为0.01。
(sdedr:define-refinement-function “R.Global” “MaxLenInt” “SiliconCarbide” “SiliconCarbide” 0.01 1.5 “DoubleSide”)
(sdedr:define-refinement-function “R.Global” “MaxLenInt” “SiliconCarbide” “SiO2” 0.01 1.2 “DoubleSide”)
在材料的交界处最好把网格定义的密一些，在边界处向两边以1.5倍的速率增加。
这次写的相对于以前有点草率，主要是最近遇到了不开心的事，很难去静下心来，有什么问题大家可以私信或者评论，我估计我过两天还会把这个再改一改。

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